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AssigneeInternational Business Machines Corporation
InventorsJames William Adkisson, Jeffrey Peter Gambino, Robert Kenneth Leidy, John J. Ellis-Monaghan
Estimating the term…
A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.
An image sensor comprising:
An image sensor comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Image sensors: complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors…:…
Manufacture or treatment of image sensors covered by group H10F39/12: of coatings or optical elements
Image sensors: back-illuminated image sensors
About 4 years 1 month of term left · ends 27 Nov 2030 (estimated)
1. Field of the Invention
The invention relates generally to image sensors, methods for fabrication thereof and design structures for fabrication thereof. More particularly, the invention relates to image sensors with enhanced light capture.
2. Description of the Related Art
The objects, features and advantages of the invention are understood within the context of the Description of the Preferred Embodiment, as set forth below. The Description of the Preferred Embodiment is understood within the context of the accompanying drawings, that form a material part of this disclosure, wherein:
FIG. 1 shows a schematic cross-sectional diagram of a CMOS image sensor in accordance with a particular embodiment of the invention.
FIG. 2 shows a schematic cross-sectional diagram of a CMOS image sensor in accordance with another particular embodiment of the invention.
The invention, which includes a solid state image sensor and a method for fabricating the solid state image sensor, is understood within the context of the description set forth below. The description set forth below is understood within the context of the drawings described above. Since the drawings are intended for illustrative purposes, the drawings are not necessarily drawn to scale.
FIG. 1 shows a schematic cross-sectional diagram illustrating a CMOS image sensor in accordance with a particular embodiment of the invention. This particular embodiment of the invention comprises a first embodiment of the invention.
FIG. 1 shows a semiconductor substrate 10 that includes a circuitry portion R1 of the semiconductor substrate 10 that laterally adjoins and is adjacent a photosensitive portion R2 of the semiconductor substrate 10. Included within the photosensitive portion R2 of the semiconductor substrate 10 (as completely fabricated) is a plurality of active pixels AP, as well as a dark pixel DP. The semiconductor substrate 10 also includes a plurality of isolation regions 11 that separate a plurality of active regions of the semiconductor substrate 10. Included within the active regions within the photosensitive portion R2 of the semiconductor substrate 10, and separated by the isolation regions 11, is a plurality of transistors T, each one of which includes a photosensitive region PSR. An additional transistor T, absent an intended photosensitive region PSR, is located within the circuitry portion R1 of the semiconductor substrate 10.