Laser annealing method and device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsRyusuke Kawakami, Kenichirou Nishida, Norihito Kawaguchi, Miyuki Masaki, Atsushi Yoshinouchi
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsRyusuke Kawakami, Kenichirou Nishida, Norihito Kawaguchi, Miyuki Masaki, Atsushi Yoshinouchi
Estimating the term…
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
A laser irradiation apparatus comprising:
A laser irradiation apparatus comprising:
A laser irradiation apparatus comprising:
A laser irradiation apparatus comprising:
A laser irradiation apparatus comprising:
A laser irradiation apparatus comprising:
Dependencies are inferred from the claim text.