Magnetoresistive element and magnetic memory
AssigneeKabushiki Kaisha Toshiba
InventorsToshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Katsuya Nishiyama, Tadaomi Daibou, Tatsuya Kishi, Hiroaki Yoda
Life of this patent
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Abstract
A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.
Claims18
A magnetoresistive element comprising:
- a first underlying layer having one of an amorphous structure and a fine crystal structure;
- a second underlying layer provided on the first underlying layer and containing an oxide having an NaCl structure;
- a third underlying layer provided on the first underlying layer, having an NaCl structure, and containing a nitride orienting in a (001) plane;
- a first magnetic layer provided on the third underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane;
- a first nonmagnetic layer provided on the first magnetic layer;
- and
- a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.
Dependencies are inferred from the claim text.