Field effect transistor having ohmic body contact(s), an integrated circuit structure incorporating stacked field effect transistors with such ohmic body contacts and associated methods

Abstract

Disclosed is a field effect transistor (FET), in which ohmic body contact(s) are placed relatively close to the active region. The FET includes a semiconductor layer, where the active region and body contact region(s) are defined by a trench isolation structure and where a body region is below and abuts the active region, the trench isolation structure and the body contact region(s). A gate traverses the active region. Dummy gate(s) are on the body contact region(s). A contact extends through each dummy gate to the body contact region below. Dielectric material isolates the contact(s) from the dummy gate(s). During processing, the dummy gate(s) act as blocks to ensure that the body contact regions are not implanted with source/drain dopants or source/drain extension dopants and, thereby to ensure that the body contacts, as formed, are ohmic. Also disclosed are an integrated circuit structure with stacked FETs, having such ohmic body contacts, and associated methods.

Dependencies are inferred from the claim text.