Back to results
US 8,299,536 B2Granted
Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof
AssigneeRenesas Electronics Corporation
InventorTakeo Matsuki
Life of this patent
Estimating the term…
Abstract
A semiconductor device with integrated MIS field-effect transistors includes a first transistor including a first gate electrode having a composition represented by MAx, and a second transistor including a second gate electrode having a composition represented by MAy, in which M includes at least one metal element selected from the group consisting of W, Mo, Ni, Pt, Ta, Pd, Co, and Ti, A includes at least one of silicon and germanium, and 0<x≦3, and 0<y≦3, and x and y are different from each other.
Claims4
A semiconductor device with integrated MIS field-effect transistors, said semiconductor device comprising:
- a first gate electrode having a composition represented by MAx;
- a second gate electrode having a composition represented by MAy;
- and
- a third gate electrode having a composition represented by MAz,
- wherein M comprises at least one metal element selected from the group consisting of W, Mo, Ni, Pt, Ta, Pd, Co, and Ti,
- wherein A comprises at least one of silicon and germanium, and
- wherein 0<x≦3, 0<y≦3, and 0<z≦3, and x, y and z are different from one another.
4 more elements
Dependencies are inferred from the claim text.