FET with replacement gate structure and method of fabricating the same
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
Life of this patent
Estimating the term…
Abstract
A MUGFET and method of manufacturing a MUGFET is shown. The method of manufacturing the MUGFET includes forming temporary spacer gates about a plurality of active regions and depositing a dielectric material over the temporary spacer gates, including between the plurality of active regions. The method further includes etching portions of the dielectric material to expose the temporary spacer gates and removing the temporary spacer gates, leaving a space between the active regions and a remaining portion of the dielectric material. The method additionally includes filling the space between the active regions and above the remaining portion of the dielectric material with a gate material.
Claims17
A MUGFET structure comprising:
- active regions comprising a first active region adjacent to a second active region;
- and
- a dual damascene replacement gate structure including:
- a lower portion having a gate thickness of about 30% or less of a distance between the first active region and the second active region;
- and
- an upper portion that is configured to strap the active regions,
- wherein the upper portion of the dual damascene replacement gate structure spans at least the distance between the first active region and the second active region.
A MUGFET structure comprising:
- active regions comprising a first active region adjacent to a second active region;
- a dual damascene replacement gate structure, comprising:
- a metal having a planar surface;
- a lower portion;
- an upper portion;
- and
- a dielectric and metal region surrounding the active regions;
- and
- a dielectric material located between the first active region and the second active region,
- wherein:
- the lower portion includes a gate thickness of about 30% or less of a distance between the first active region and the second active region;
- the upper portion straps the active regions;
- the upper portion spans at least the distance between the first active region and the second active region;
- and
- the active regions are fins of the MUGFET.
Dependencies are inferred from the claim text.