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US 8,299,529 B2Granted
Method for producing thin film transistor and thin film transistor
AssigneeUlvac, Inc.
InventorsSatoru Takasawa, Satoru Ishibashi, Tadashi Masuda
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AssigneeUlvac, Inc.
InventorsSatoru Takasawa, Satoru Ishibashi, Tadashi Masuda
Estimating the term…
A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.
A method for producing a thin film transistor of an inverted staggered type, comprising the steps of:
A thin film transistor of an inverted staggered type, comprising:
Dependencies are inferred from the claim text.
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Characterised by their conductive parts: barrier, adhesion or liner layers
Characterised by the electrodes: characterised by the electrode materials
Group IV materials, e.g. germanium or silicon carbide: silicon
The principal metal being copper: copper alloys
About 2 years 9 months of term left · ends 17 Jul 2029 (estimated)
The present invention relates to a transistor having electrode films composed of a copper alloy and a method for producing such a transistor.
Conventionally, metallic wiring films are connected to a source area and a drain area of a TFT (thin film transistor) inside an electronic circuit of, such as, the TFT or the like.
Recently, since the TFTs and the wiring films have been being made finer and finer, wiring films which have copper as a main ingredient are used to obtain wiring films having low resistances.
FIG. 1(a) is a cross-sectional view for illustrating a method for producing the transistor used in an embodiment of the present invention.
FIG. 1(b) is a cross-sectional view for illustrating the method for producing the transistor used in an embodiment of the present invention.
FIG. 1(c) is a cross-sectional view for illustrating the method for producing the transistor used in an embodiment of the present invention.
In FIG. 1(a), a reference numeral 10 denotes an object to be processed, for which the transistor producing method according to an embodiment of the present invention is to be used.
The object 10 to be processed has a transparent substrate 11 made of glass or the like; and a gate electrode 12 and a pixel electrode 13 are arranged spaced-apart on the transparent substrate 11.
A gate insulation film 14, a silicon layer 16 and an n-type silicon layer 18 are placed on the transparent substrate 11 in this order from a side of the transparent substrate 11, covering the gate electrode 12 and the pixel electrode 13. The n-type silicon layer 18 is a silicon layer in which a resistance value is made smaller than that of the silicon layer 16 by adding an impure substance. In this embodiment, the n-type silicon layer 18 and the silicon layer 16 are constituted by amorphous silicon, but they may be a single crystal or polycrystal. The gate insulation layer 14 is an insulation film (such as, a thin film of silicon nitride or the like), but it may be a film of silicon oxynitride film or another insulation film.