Transistor and method thereof
AssigneeSemiconductor Components Industries, LLC
InventorsJaume Roig-Guitart, Peter Moens
Life of this patent
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AssigneeSemiconductor Components Industries, LLC
InventorsJaume Roig-Guitart, Peter Moens
Estimating the term…
An electronic device can include a first well region of a first conductivity-type and a second well region of a second conductivity-type and abutting the first well region. The first conductivity-type and the second conductivity type can be opposite conductivity types. In an embodiment, an insulator region can extend into the first well region, wherein the insulator region and the first well region abut and define an interface, and, from a top view, the insulator region can include a first feature extending toward the first interface, and the insulator region can define a first space bounded by the first feature, wherein a dimension from a portion of the first feature closest to the first interface is at least zero. A gate structure can overlie an interface between the first and second well regions.
An electronic device comprising:
An electronic device comprising:
A process of forming an electronic device comprising:
Dependencies are inferred from the claim text.