Nonvolatile memory device and method of fabricating the same

A method of manufacturing a nonvolatile memory device, the method comprising:

• forming a semiconductor structure on a substrate, the semiconductor structure including first and second portions that are substantially vertical and face each other, and bottom portion that connects the first and second portions;
• and
• forming a plurality of memory cells that are arranged along the first and second portions of the semiconductor structure and are serially connected, each memory cell defined by,
• an active region defined by a part of one of the first and second portions of the semiconductor structure,
• a control gate electrode, and
• one of a plurality of storage media,
• the one of the plurality of storage media between the control gate electrode and the part of one of the first and second portions, and
• the one of the plurality of storage media covering at least one of an upper and a lower surface of the control gate electrode.

A nonvolatile memory device, comprising:

• a substrate;
• a semiconductor structure on the substrate, the semiconductor structure including first and second portions that are substantially vertical and face each other,
• a bottom portion that connects the first and second portions, and
• a first peak portion extending horizontally from an upper end of the first portion;
• and
• a plurality of memory cells serially connected and arranged along the first and second portions of the semiconductor structure,
• each memory cell containing an active region defined by a part of one of the first and second portions of the semiconductor structure;
• a string selection transistor including a horizontal active region,
• the horizontal active region defined by a part of the first peak portion of the semiconductor structure.