Read transistor for single poly non-volatile memory using body contacted SOI device

A non-volatile random access memory comprising:

• a read field effect transistor (FET) having a body contact formed in a silicon layer of a SOI, the read FET further comprising a diffusion region under a gate structure formed in the silicon layer, and which is in electrical contact with the body contact;
• and
• a coupling capacitor having N+ or P+ diffusion regions isolated from the read FET by isolation regions formed in the silicon of the SOI and buried oxide.

A method of forming a non-volatile random access memory, comprising:

• forming a read field effect transistor (FET) having a body contact formed in silicon of SOI, and in electrical contact with a diffusion region under a gate of the read FET.

A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising a read field effect transistor (FET) having a body contact formed in the silicon of the SOI and in electrically contact with a diffusion region under a gate of the read FET.