Semiconductor heterostructures and manufacturing therof
OwnerSebastian Lourdudoss, Fredrik Olssoninventors
Life of this patent
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Abstract
A semiconductor heterostructure (10) includes a crystalline substrate of a first semiconductor material and a mask (11) disposed over a surface of the crystalline substrate. The mask (11) has openings (12) including a plurality of elongated opening sections (13, 14) with a width (w) less than or equal to 900 nm. At least one first section (13) of the elongated opening sections is directed non-parallel relative to at least one second section (14) of the elongated opening sections. The semiconductor heterostructure (10) further includes an overgrowth crystalline layer of a second semiconductor material, filling the openings (12) and covering the mask. A method for manufacturing of such a semiconductor heterostructure is also presented.
Claims18
A semiconductor heterostructure, comprising:
- a crystalline substrate of a first semiconductor material;
- a mask disposed over a surface of said crystalline substrate, said mask having openings comprising a plurality of elongated opening sections;
- and
- an overgrowth crystalline layer of a second semiconductor material, filling said openings and covering said mask, said second semiconductor material being InP, GaAs or a combination thereof;
- wherein,
- at least one first section of said elongated opening sections is directed non-parallel relative to at least one second section of said elongated opening sections,
- said plurality of elongated opening sections have a width less than or equal to 500 nm,
- said elongated opening sections are crossing linear opening sections,
- a longitudinal direction of at least one of said first section and said second section is directed in non-zero angles with respect to both main crystal axes of said surface of said crystalline substrate, and
- at least one of said non-zero angles with respect to both main crystal axes of said surface of said crystalline substrate and said non-zero angle with respect to all symmetry planes of said surface of said crystalline substrate is larger than 5°.
A semiconductor heterostructure, comprising:
- a crystalline substrate of a first semiconductor material;
- a mask disposed over a surface of said crystalline substrate, said mask having openings comprising a plurality of elongated opening sections;
- and
- an overgrowth crystalline layer of a second semiconductor material, filling said openings and covering said mask, said second semiconductor material being InP, GaAs or a combination thereof;
- wherein,
- at least one first section of said elongated opening sections is directed non-parallel relative to at least one second section of said elongated opening sections,
- said plurality of elongated opening sections have a width less than or equal to 500 nm,
- said elongated opening sections are curved sections or circular arc sections, and
- said openings form concentric rings or spirals.
A method for manufacturing of a semiconductor heterostructure, comprising the steps of:
- providing a crystalline substrate of a first semiconductor material;
- disposing a mask over a surface of said crystalline substrate;
- creating openings in said mask, said openings comprising a plurality of elongated opening sections;
- and
- growing an overgrowth crystalline layer of a second semiconductor material, filling said openings and covering said mask, said second semiconductor material being selected from InP, GaAs and combinations thereof;
- wherein,
- at least one first section of said elongated opening sections is directed non-parallel relative to at least one second section of said elongated opening sections,
- said step of creating comprises creating a plurality of elongated opening sections having a width less than or equal to 500 nm,
- said elongated opening sections are crossing linear opening sections,
- a longitudinal direction of at least one of said first section and said second section is directed in non-zero angles with respect to both main crystal axes of said surface of said crystalline substrate, and
- at least one of said non-zero angles with respect to both main crystal axes of said surface of said crystalline substrate and said non-zero angle with respect to all symmetry planes of said surface of said crystalline substrate is larger than 5°.
A method for manufacturing of a semiconductor heterostructure, comprising the steps of:
- providing a crystalline substrate of a first semiconductor material;
- disposing a mask over a surface of said crystalline substrate;
- creating openings in said mask, said openings comprising a plurality of elongated opening sections;
- and
- growing an overgrowth crystalline layer of a second semiconductor material, filling said openings and covering said mask;
- wherein,
- said second semiconductor material is InP, GaAs or combinations thereof;
- at least one first section of said elongated opening sections is directed non-parallel relative to at least one second section of said elongated opening sections;
- said step of creating openings comprises creating a plurality of elongated opening sections having a width less than or equal to 500 nm;
- said elongated opening sections are curved sections or circular arc sections;
- and
- said openings form concentric rings or spirals.
Dependencies are inferred from the claim text.