Semiconductor device having semiconductor substrate including diode region and IGBT region

A semiconductor device comprising a semiconductor substrate in which a diode region and an IGBT region are formed, wherein

• an anode electrode is formed on an upper surface of the semiconductor substrate within the diode region,
• an emitter electrode is formed on the upper surface of the semiconductor substrate within the IGBT region,
• a common electrode is formed on a lower surface of the semiconductor substrate,
• an anode region, a diode drift region and a cathode region are formed within the diode region,
• the anode region is formed of a p-type semiconductor and in contact with the anode electrode,
• the diode drift region is formed of an n-type semiconductor and formed under the anode region,
• the cathode region is formed of an n-type semiconductor, which has a higher concentration of n-type impurities than that in the diode drift region, formed under the diode drift region and in contact with the common electrode,
• an emitter region, a body region, an IGBT drift region, a collector region and a gate electrode are formed within the IGBT region,
• the emitter region is formed of an n-type semiconductor and in contact with the emitter electrode,
• the body region is formed of a p-type semiconductor, formed beside and under the emitter region and in contact with the emitter electrode,
• the IGBT drift region is formed of an n-type semiconductor and formed under the body region,
• the collector region is formed of a p-type semiconductor, formed under the IGBT drift region and in contact with the common electrode,
• the gate electrode is facing a range of the body region via an insulating film, wherein the range of the body region is a range separating the emitter region from the IGBT drift region,
• a separation region formed of a p-type semiconductor is formed in a range between the diode region and the IGBT region and extending from the upper surface of the semiconductor substrate to a position deeper than both of a lower end of the anode region and a lower end of the body region,
• a diode lifetime control region is formed within the diode drift region, wherein a carrier lifetime in the diode lifetime control region is shorter than that in the diode drift region outside the diode lifetime control region, and
• an end of the diode lifetime control region on an IGBT region side is located right below the separation region.