Semiconductor light emitting device and method of fabricating the same
AssigneeLG Innotek Co., Ltd.
InventorHyo Kun Son
Life of this patent
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Abstract
Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer includes an insulation layer including protrusions having a predetermined interval and a void between the protrusions of the insulation layer. The active layer is disposed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is disposed on the active layer.
Claims20
A semiconductor light emitting device, comprising:
- a first conductive type semiconductor layer comprising a first semiconductor layer and a second semiconductor layer on the first semiconductor layer;
- an insulation layer between the first semiconductor layer and the second semiconductor layer, the insulation layer having a recess;
- an active layer on the first conductive type semiconductor layer;
- and
- a second conductive type semiconductor layer on the active layer,
- wherein a portion of the first conductive type semiconductor layer is disposed in the recess.
A semiconductor light emitting device, comprising:
- a first conductive type semiconductor layer comprising a first semiconductor layer and a second semiconductor layer on the first semiconductor layer, the second semiconductor layer comprising a void;
- an active layer on the second semiconductor layer;
- a second conductive type semiconductor layer on the active layer;
- and
- a first electrode layer physically contacted with the first semiconductor layer,
- wherein the second semiconductor layer includes a plurality of portions spaced apart from each other, and
- wherein the void is disposed in at least one of the plurality of portions.
A semiconductor light emitting device, comprising:
- a first conductive type semiconductor layer comprising a plurality of semiconductor layers;
- a second conductive type semiconductor layer on the first conducive type semiconductor layer;
- an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
- an insulation layer between the plurality of semiconductor layers, the insulation layer including a plurality of first protrusions;
- and
- a plurality of recesses between the plurality of first protrusions,
- wherein the first conductive type semiconductor layer includes a plurality of second protrusions located in the plurality of recesses.
Dependencies are inferred from the claim text.