Back to results
US 8,299,490 B2Granted
Nitride-based semiconductor device having electrode on m-plane
AssigneePanasonic Corporation
InventorsMitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
Life of this patent
Estimating the term…
Abstract
A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
Claims14
A nitride-based semiconductor device, comprising:
- a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane;
- and
- an electrode that is arranged on the p-type semiconductor region,
- wherein the p-type semiconductor region is made of an AlxInyGazN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and
- the electrode includes an Mg layer which is in contact with the surface of the p-type semiconductor region and an Ag layer which is provided on the Mg layer, and
- a contact resistance of the electrode arranged on the m-plane and annealed at a temperature of 500° C. to 700° C. is less than 1.0×10−02 Ωcm2, and is lower than a contact resistance when the electrode is arranged on a c-plane of the same p-type semiconductor region and annealed at a temperature of 500° C. to 700° C.
3 more elements
Dependencies are inferred from the claim text.