Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer

A semiconductor light emitting device comprising:

• an upper growth layer including a light emitting layer;
• a transparent substrate through which a radiant light from the light emitting layer passes, wherein the transparent substrate is made of GaP;
• and
• a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate, wherein the surface-controlling layer is made of GaAs, but none of In, Al, and P substantially, the bonding layer is made of InGaAIP,
• the upper growth layer being formed on an upper surface of the surface-controlling layer and the upper growth layer includes InGaAIP, and
• a lattice constant difference at an interface between the surface-controlling layer and the upper growth layer being smaller than that at an interface between the bonding layer and the transparent substrate.