Thin film transistor and fabrication method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHidekazu Miyairi, Ryu Komatsu, Takafumi Mizoguchi
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Abstract
A thin film transistor is provided with a high crystallized region in a channel formation region and a high resistance region between a source and a drain, and thus has a high electric effect mobility and a large on current. The thin film transistor includes an “impurity which suppresses generation of crystal nuclei” contained in the base layer or located on its surface, a first wiring layer over a base layer, an impurity semiconductor layer over the first wiring, a semiconductor layer over the impurity semiconductor layer, the semiconductor layer comprises a crystalline region and a region containing an amorphous phase which is formed adjacent to the base layer.
Claims8
A thin film transistor comprising:
- a light blocking layer over a substrate;
- a base layer over the light blocking layer;
- a first wiring layer over the base layer;
- an impurity semiconductor layer over the first wiring;
- and
- a semiconductor layer over the impurity semiconductor layer, wherein the semiconductor layer comprises a crystalline region and a region containing an amorphous phase,
- wherein the region containing the amorphous phase is located between the base layer and the crystalline region.
A thin film transistor comprising:
- a light blocking layer over a substrate;
- a base layer over the light blocking layer;
- a first wiring layer over the base layer;
- a side wall insulating layer in contact with a side surface of the first wiring layer;
- an impurity semiconductor layer over the first wiring;
- and
- a semiconductor layer over the impurity semiconductor layer, wherein the semiconductor layer comprises a crystalline region and a region containing an amorphous phase,
- wherein the region containing the amorphous phase is located between the base layer and the crystalline region.
Dependencies are inferred from the claim text.