X-ray detector

An X-ray detector, comprising:

• a first substrate;
• a gate electrode formed on the substrate;
• a gate insulating layer formed on the gate electrode and the first substrate and formed to cover the gate electrode;
• a first semiconductor layer of a thin film transistor stacked on one part of the gate insulating layer;
• a data line configured to include a source electrode to cover a first portion of the first semiconductor layer;
• a first lower electrode configured to include a drain electrode opposite to the source electrode, formed on an upper portion of the gate insulating layer and a second portion of the first semiconductor layer, and extending from the drain electrode;
• a passivation layer formed on an upper portion of one part of the first lower electrode;
• a second lower electrode formed on an upper portion of the passivation layer and on an upper portion of the first lower electrode in which the passivation layer is not formed;
• a second semiconductor layer of a diode formed on an upper portion of the second lower electrode;
• and
• an upper electrode formed on an upper portion of the second semiconductor layer of the diode,
• wherein the second lower electrode overlaps with the gate electrode.

An X-ray detector, comprising:

• a substrate based on which a thin film transistor and a PIN diode are formed;
• the thin film transistor comprised of:
• a gate electrode,
• a gate insulating layer formed to cover the gate electrode,
• a first semiconductor layer stacked on the gate insulating layer,
• a source electrode disposed to cover a first portion of the first semiconductor layer where a data line is physically connected to the source electrode, and
• a drain electrode disposed to cover a second portion of the first semiconductor layer;
• and
• the PIN diode comprised of:
• a first lower electrode extending from the drain electrode and the first lower electrode formed to cover the gate insulating layer,
• a passivation layer formed on the first lower electrode to cover an entirety of the drain electrode,
• a second lower electrode formed on the passivation layer,
• a second semiconductor layer formed to completely cover the second lower electrode, and
• an upper electrode formed to cover the second semiconductor layer.