Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
AssigneeThe Regents of the University of California
InventorsHitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, Steven P. DenBaars, James S. Speck, Shuji Nakamura
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Abstract
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
Claims21
A semiconductor Light Emitting Diode (LED), comprising at least:
- a n-type layer;
- a p-type layer;
- an active layer between the n-type layer and the p-type layer, wherein:
- the active layer emits light with a peak emission wavelength longer than 560 nm at a current density of at least less than 7.4 Amps per centimeter square, and
- the LED is a III-nitride based semi-polar LED.
A method of fabricating a semiconductor Light Emitting Diode (LED), comprising at least:
- depositing an n-type layer;
- depositing a p-type layer;
- and
- depositing an active layer between the n-type layer and the p-type layer, wherein:
- the active layer emits light with a peak emission wavelength longer than 560 nm at a current density of at least less than 7.4 Amps per centimeter square, and
- the LED is a III-nitride based semi-polar LED.
Dependencies are inferred from the claim text.