Non-volatile memory device including phase-change material

A non-volatile memory device comprising:

• a lower electrode;
• a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode;
• and
• an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer;
• wherein the phase-change material layer comprises a phase-change material comprising a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A),
• where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and
• where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1,
• wherein the phase-change material comprises a composition represented by Formula 3:
• (As)A((GeUQ(1-U))XSbYTeZ)(1-A) Formula 3
• where Q is Si or Sn, and 0≦U≦1.

A non-volatile memory device comprising:

• a lower electrode;
• a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode;
• and
• an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer;
• wherein the phase-change material layer comprises a phase-change material comprising a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A),
• where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and
• where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1,
• wherein the phase-change material comprises a composition represented by Formula 4:
• (As)A(GeX((SbVBi(1-V))YTeZ)(1-A) Formula 4
• where 0≦V≦1.

A non-volatile memory device comprising:

• a lower electrode;
• a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode;
• and
• an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer;
• wherein the phase-change material layer comprises a phase-change material comprising a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A),
• where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and
• where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1,
• wherein the phase-change material comprises a composition represented by Formula 5:
• (As)A(GeXSbY(TeWSe(1-W))Z)(1-A) Formula 5
• where 0≦W≦1.

A non-volatile memory device comprising:

• a lower electrode;
• a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode;
• and
• an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer;
• wherein the phase-change material layer comprises a phase-change material comprising a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A),
• where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and
• where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1,
• wherein the phase-change material comprises a composition represented by Formula 6:
• (As)A((GeUQ(1-U))X(SbVBi(1-V))YTeZ)(1-A) Formula 6
• where Q is Si or Sn, 0≦U≦1, and 0≦V≦1.

A non-volatile memory device comprising:

• a lower electrode;
• a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode;
• and
• an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer;
• wherein the phase-change material layer comprises a phase-change material comprising a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A),
• where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and
• where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1,
• wherein the phase-change material comprises a composition represented by Formula 7:
• (As)A(GeX(SbVBi(1-V))Y(TeWSe(1-W))Z)(1-A) Formula 7
• where 0≦V≦1, and 0≦W≦1.

A non-volatile memory device comprising:

• a lower electrode;
• a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode;
• and
• an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer;
• wherein the phase-change material layer comprises a phase-change material comprising a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A),
• where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and
• where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1,
• wherein the phase-change material comprises a composition represented by Formula 8:
• (As)A((GeUQ(1-U))XSbY(TeWSe(1-W))Z)(1-A) Formula 8
• where Q is Si or Sn, 0≦U≦1, and 0≦W≦1.

A non-volatile memory device comprising:

• a lower electrode;
• a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode;
• and
• an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer;
• wherein the phase-change material layer comprises a phase-change material comprising a composition represented by the formula (M)B(I)A(IIXIIIYIVZ)(1-A-B),
• where M is a metal, I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and
• where 0.001≦A≦0.3, 0.001≦B≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.