Bonding wire for semiconductor devices
AssigneesNippon Steel Materials Co., Ltd., Nippon Micrometal Corporation
InventorsTomohiro Uno, Keiichi Kimura, Takashi Yamada
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Abstract
A semiconductor-device bonding wire includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of <111> orientations in crystalline orientations <hkl> in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the <111> orientations have an angular difference relative to the wire lengthwise direction, the angular difference being within 15 degrees.
Claims26
A bonding wire for semiconductor devices, the bonding wire comprising:
- a core member formed of an electrically-conductive metal;
- and
- a skin layer formed on the core member and mainly composed of a metal different from the core member, and wherein
- the metal of the skin layer is a face-centered cubic metal,
- a thickness of the skin layer is within a range from 0.005 to 0.09 μm,
- an orientation ratio of <111> orientations in crystalline orientations <hkl> in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and
- said <111> orientations have an angular difference relative to the wire lengthwise direction, said angular difference being within 15 degrees.
Dependencies are inferred from the claim text.