Method for fabricating fine pattern

A method for fabricating a fine pattern, comprising:

• forming a first photomask that includes:
• a first phase shift mask region including a first phase shift layer with body portions of first light transmission regions having a line shape on a first transparent substrate;
• and
• a first binary mask region including a first light blocking layer with end portions of the first light transmission regions;
• forming a second photomask which includes:
• a second phase shift mask region including a second phase shift layer with body portions of second light transmission regions having a line shape on a second transparent substrate, wherein the second light transmission regions intersect the first light transmission regions;
• and
• a second binary region including a second light blocking layer with end portions of the second light transmission regions;
• forming a resist layer on an under layer;
• exposing regions corresponding to the first light transmission regions of the resist layer using the first photomask;
• exposing regions corresponding to the second light transmission regions of the resist layer using the second photomask;
• and
• developing the resist layer exposed to the first and second photomasks to form resist patterns with open regions corresponding to portions at intersection of the first and second light transmission regions.

A method for fabricating a fine pattern, comprising:

• forming a first photomask including first cell light transmission regions and a first dummy light transmission region in a line shape extending over a first phase shift mask region and a first binary mask region adjacent to the first phase shift mask region;
• forming a second photomask including second cell light transmission regions and a second dummy light transmission region in a line shape extending over a second phase shift mask region and a second binary mask region adjacent to the second phase shift mask region, wherein the second cell light transmission regions and the second dummy light transmission region intersect the first cell light transmission regions and the first dummy light transmission region;
• forming a resist layer on an under layer;
• exposing the resist layer using the first photomask;
• exposing the resist layer using the second photomask;
• developing the resist layer exposed to the first and second photomasks to form resist patterns with open regions corresponding to portions where the first cell light transmission regions and the first dummy light transmission region intersect the second cell light transmission regions and the second dummy light transmission region;
• and
• forming cell hole patterns and dummy hole patterns by etching portions of the under layer exposed to the resist patterns.