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US 8,298,952 B2Granted
Isolation structure and formation method thereof
AssigneeMacronix International Co., Ltd.
InventorsMing-Tsung Wu, Shih-Ping Hong, Chun-Min Cheng, Yu-Chung Chen, Han-Hui Hsu
Life of this patent
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Abstract
An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
Claims8
A formation method of an isolation structure, the method comprising:
- forming a trench in a substrate, wherein a sidewall of the trench has a first inclined surface and a second inclined surface, the first inclined surface is located on the second inclined surface, a slope of the first inclined surface is different from a slope of the second inclined surface, and a length of the first inclined surface is greater than 15 nanometers, wherein the substrate has a first region and a second region, a length that the first inclined surface of the trench in the first region is projected onto a horizontal plane is a first horizontal length, a length that the first inclined surface of the trench in the second region is projected onto the horizontal plane is a second horizontal length, the first horizontal length is different from the second horizontal length.
Dependencies are inferred from the claim text.