Warpage control for die with protruding TSV tips during thermo-compressive bonding

A method of fabricating through silicon via (TSV) die, comprising:

• depositing a first dielectric layer on a substrate that includes a plurality of TSV die, said plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs including an inner metal core that reaches from said topside to protruding TSV tips that extend out from said bottomside, wherein said first dielectric layer covers said TSV tips;
• removing a portion of said first dielectric layer to expose said TSV tips;
• depositing at least one metal layer on said TSV tips to form metal caps on said TSV tips to provide metal capped TSV tips;
• depositing a second dielectric layer on said bottomside of said substrate to cover said metal capped TSV tips, and
• removing a portion of said second dielectric layer to expose a portion of said metal capped TSV tips.

A stacked die precursor, comprising:

• a workpiece including a workpiece surface having a plurality of contact pads thereon;
• a through substrate via (TSV) die including a substrate having a topside including active circuitry and bonding features on said topside, a bottomside, and a plurality of TSVs comprising a metal inner core that reaches from said topside to protruding TSV tips that extend out from said bottomside, and metal caps on said TSV tips to provide metal capped TSV tips, and
• at least one dielectric layer on said bottomside of said TSV die that extends to cover only a portion of said metal caps so that a distal end of said metal capped TSV tips is exposed,
• wherein said bonding features of said TSV die are bonded to said plurality of contact pads on said workpiece surface.