Method of manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorMasahiro Yamaguchi
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes, but is not limited to, the following processes. A seed layer is formed over a substrate. The seed layer includes first, second, and third portions. A first electrode covering the first portion of the seed layer is formed without forming an electrode on the second and third portions of the seed layer. The third portion of the seed layer is removed so that the first and second portions remain over the substrate, and the first and second portions are separated from each other.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a seed layer over a substrate, the seed layer including first, second, and third portions;
- forming a first electrode covering the first portion of the seed layer without forming an electrode on the second and third portions of the seed layer;
- and
- removing the third portion of the seed layer so that the first and second portions remain over the substrate, and the first and second portions are separated from each other.
A method of manufacturing a semiconductor device, comprising:
- forming a first hole in a substrate;
- forming a seed layer covering an inner surface of the first hole and the substrate, the seed layer including first, second, and third portions;
- forming a first electrode covering the first portion of the seed layer without forming an electrode on the second and third portions of the seed layer, the first electrode filling the first hole;
- and
- removing the third portion of the seed layer so that the first and second portions remain over the substrate, and the first and second portions are separated from each other.
A method of manufacturing a semiconductor device, comprising:
- preparing a substrate having first and second surfaces;
- forming a wiring structure covering the first surface of the substrate, the wiring structure having a first surface opposing the second surface of the substrate,
- forming a first electrode partially covering the first surface of the wiring structure;
- forming a seed layer covering the second surface of the substrate, the seed layer including first, second, and third portions;
- forming a second electrode covering the first portion of the seed layer so as to be electrically connected to the first electrode, without forming an electrode on the second and third portions of the seed layer;
- and
- removing the third portion of the seed layer so that the first and second portions remain over the second surface of the substrate, and the first and second portions are separated from each other.
Dependencies are inferred from the claim text.