US 8,298,939 B1Granted

Method for forming conductive contact

AssigneeNanya Technology Corporation

InventorsJar-Ming Ho, Yi-Nan Chen, Hsien-Wen Liu

Life of this patent

Estimating the term…

Loading patent…

Abstract

A method for fabricating a conductive contact is provided, including: providing a semiconductor substrate with a dielectric layer formed thereover and two conductive regions and an isolation element formed therein, wherein the isolation element isolates the two conductive regions from each other; forming an opening in the dielectric layer, exposing a top surface of the isolation element and a portion of a top surface of each of the conductive regions; performing an epitaxy process and forming a conductive semiconductor layer within the opening, overlying the top surface of the isolation element and the portion of the top surface of each of the conductive regions; and forming a conductive layer in the opening, overlying the conductive semiconductor layer and filling the opening.

Claims9

Dependent claims

A method for fabricating a conductive contact, comprising:

providing a semiconductor substrate with a dielectric layer formed thereover and two conductive regions and an isolation element formed therein, wherein the isolation element isolates the two conductive regions from each other, and the semiconductor substrate is a p-type substrate and the two conductive regions are n-type regions;
forming an opening in the dielectric layer, exposing a top surface of the isolation element and a portion of a top surface of each of the conductive regions;
performing an epitaxy process and forming a conductive semiconductor layer within the opening, overlying the top surface of the isolation element and the portion of the top surface of each of the conductive regions;
and
forming a conductive layer in the opening, overlying the conductive semiconductor layer and filling the opening.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/162,536Filed 16 Jun 2011
Granted: 30 Oct 2012
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10P 14/432
Chemical deposition, e.g. chemical vapour deposition [CVD]: using selective deposition
H10W 20/057
By filling conductive material into holes, grooves or trenches: by selectively depositing, e.g. by using selective CVD or plating
H10W 20/0698
Of conductive parts of the interconnections: local interconnections
H10D 30/0275
Of lateral single-gate IGFETs: forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised…