US 8,298,938 B2 · Phase change memory cell structures and methods

Abstract

Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack. One or more embodiments include forming a via through the first, second, and third regions of the dielectric stack structure, depositing a phase change material in the via, and forming a second electrode on the phase change material.

Claims29

Dependent claims

A method of forming a memory cell structure, comprising forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack;

forming a via through the first, second, and third region of the dielectric stack structure;
and depositing a resistance variable material in the via such that the resistance variable material within the via is in contact with the first region, the second region and the third region.

Dependencies are inferred from the claim text.

Phase change memory cell structures and methods

Life of this patent

Phase change memory cell structures and methods

Life of this patent

Abstract

Claims29