Manufacturing method of semiconductor device and semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having a principal surface, a back surface opposite the principal surface;
• a device region formed on the principal surface;
• and
• a scribe region disposed around the device region,
• wherein the device region includes a plurality of semiconductor elements formed on the principal surface, a first insulating layer formed so as to cover the semiconductor elements, an uppermost wiring layer formed over the first insulating layer, a plurality of terminals formed on the uppermost wiring layer and electrically coupled to the semiconductor elements, and a second insulating layer formed so as to cover the uppermost wiring layer and having a plurality of openings from which each of the terminals is exposed,
• wherein the scribe region includes the first insulating layer formed over the principal surface, a first metal pattern formed on the uppermost wiring layer, and the second insulating layer formed so as to expose a side surface of the first metal pattern at an end of the semiconductor substrate and to cover the entire upper surface of the first metal pattern,
• wherein a plurality of wiring layers is formed between the principal surface and the uppermost wiring layer,
• wherein the device region includes a second metal pattern formed by connecting respective wiring layers from the principal surface to the uppermost wiring layer so as to surround a region in which the terminals are formed,
• wherein the second insulating layer is formed over the second metal pattern so as to cover the upper surface of the second metal pattern,
• wherein the first metal pattern and the second metal pattern are electrically spaced apart from each other,
• wherein a trench is formed between the second insulating layer of the device region and the second insulating layer of the scribe region,
• wherein the second insulating layer of the device region is separated from the second insulating layer of the scribe region, and
• wherein an interval from an end of the trench on a scribe region side to an end of the first metal pattern is shorter than an interval from an end of the trench on a device region side to an end of the second metal pattern.