Method for forming semiconductor layer and method for manufacturing light emitting device
AssigneeLG Innotek Co., Ltd.
InventorsDae Sung Kang, Sang Hoon Han
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Abstract
A method for manufacturing a light emitting device according to an embodiment of the present invention includes preparing a growth substrate; selectively forming a projection pattern on the growth substrate; forming a first conductive type semiconductor layer on the growth substrate and the projection pattern; forming an active layer on the first conductive type semiconductor layer; forming a second conductive type semiconductor layer on the active layer; and executing an isolation etching for selectively removing the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer including the projection pattern.
Claims12
A method for forming a semiconductor layer comprising,
- preparing a growth substrate;
- selectively forming a projection pattern on the growth substrate;
- forming a semiconductor layer on the growth substrate and the projection pattern;
- and
- selectively removing the semiconductor layer including the projection pattern,
- wherein the projection pattern is formed to have a peak on an upper portion thereof to generate a dislocation in the semiconductor layer.
A method for manufacturing a light emitting device comprising,
- preparing a growth substrate;
- selectively forming a projection pattern on the growth substrate;
- forming a first conductive type semiconductor layer on the growth substrate and the projection pattern;
- forming an active layer on the first conductive type semiconductor layer;
- forming a second conductive type semiconductor layer on the active layer;
- and
- executing an isolation etching for selectively removing the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer including the projection pattern;
- and
- forming a peak on an upper portion of the projection pattern to generate a dislocation in the semiconductor layer.
Dependencies are inferred from the claim text.