Semiconductor structure and method of manufacturing same

A method of forming a structure, comprising:

• forming vias in a photoresist in alignment with a metal layer Mx+1 and remote from the wiring layer Mx+1;
• etching layers in the structure in alignment with the vias to form a first trench in alignment and extending to the metal layer Mx+1 and at least a second trench isolated from the metal layer Mx+1;
• and
• filling, simultaneously, the first trench and the at least second trench with conductive material, the conductive material in the first trench being in electrical contact with the metal layer Mx+1 and the conductive material in the at least second trench forming a vertically extending wiring line electrically isolated from the metal layer Mx+1 and any other metal layer below the at least second trench, the filling of the first trench and the second trench further forming upper wiring layers one of which is orthogonal and in electrical contact with the vertically extending wiring line.

A method comprising:

• forming a first trench extending to a lower metal layer Mx+1;
• forming a second trench remote from the first trench and extending below a drop depth of the first trench;
• filling the first trench and the second trench with filler material in order to provide a planar surface for subsequent processing;
• providing a capping layer and antireflective coating layer over the filler material;
• forming a photoresist material over the antireflective coating layer, which is exposed and developed to form a pattern which is aligned with the first trench and the second trench, previously filled with the filler material;
• etching self aligned trenches over the previously formed first trench and the second trench;
• and
• filling the self aligned trenches with a conductive material.