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US 8,298,905 B2Granted
Method for forming functional element using metal-to-insulator transition material, functional element formed by method, method for producing functional device, and functional device produced by method
AssigneeSony Corporation
InventorDaisuke Ito
Life of this patent
Estimating the term…
Abstract
A method for forming a functional element includes a first step of forming an insulating layer composed of an insulator phase of a transition metal oxide serving as a metal-to-insulator transition material, the transition metal oxide being mainly composed of vanadium dioxide, and a second step of causing part of the insulating layer to transition to a metallic phase, in which the insulator phase differs from the metallic phase in terms of electrical resistivity and/or light transmittance.
Claims12
A method for forming a functional element, comprising:
- forming a plurality of insulating layers that are stacked, each insulating layer being composed of an insulator phase of a transition metal oxide serving as a metal-to-insulator transition material, the transition metal oxide comprising vanadium dioxide;
- and
- using laser irradiation to cause a part of each of the insulating layers to transition to a metallic phase to form a respective electrical wiring in each of the insulating layers, using the laser irradiation including focusing a laser spot on each insulating layer, the laser spot formed by converging laser light from a laser light source, and selectively scanning each insulating layer with the laser spot so as to form the respective electrical wiring in a desired region of the insulting layer,
- wherein,
- the insulator phase differs from the metallic phase in terms of at least electrical resistivity.
2 more elements
Dependencies are inferred from the claim text.