Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit

A method for fabricating a back-end-of-line (BEOL) interconnect structure and a passive element, the method comprising:

• forming a first conductive feature extending through a layer stack of first and second dielectric layers in a metallization level;
• removing the first dielectric layer from the second dielectric layer to expose a top surface of the second dielectric layer so that the top surface of the second dielectric layer has a recessed relationship relative to a top surface of the first conductive feature;
• after the first dielectric layer is removed, depositing a conductive material layer on the top surface of the second dielectric layer;
• forming a patterned photoresist layer on the conductive material layer;
• and
• selectively etching the conductive material layer in the presence of the patterned photoresist layer to form a portion of the passive element that has a top surface that is approximately coplanar with the top surface of the first conductive feature or below the top surface of the first conductive feature.