Semiconductor devices and methods of fabricating the same

A method of fabricating a semiconductor device, the method comprising:

• forming a sacrificial film and an active layer in sequence on a substrate;
• successively patterning the active layer, the sacrificial film, and the substrate to form a sacrificial pattern and an active pattern stacked in sequence, and a trench;
• forming a field isolation film to fill the trench;
• partially recessing the field isolation film to partially expose the sacrificial pattern;
• removing the sacrificial pattern by isotropically etching to form an empty region;
• forming a dielectric film to fill the empty region;
• forming an embedded pattern to fill the recess region on the dielectric film formed on the bottom and sidewall of the recess region of the field isolation film;
• forming a gate insulation film and a gate electrode to be stacked in sequence on the active pattern;
• and
• forming a pair of impurity layers to locate in the active pattern at both sides of the gate electrode, respectively, the bottoms of the impurity layers contacting with the dielectric film,
• wherein a channel region between the impurity layers is a data storage field.