Formation of a super steep retrograde channel
OwnerJames B. Burr, Archisman Bagchi +1inventors
InventorsJames B. Burr, Archisman Bagchi, Jawad Nasrullah
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Abstract
Systems and methods for raised source/drain with super steep retrograde channel are described. In accordance with a first embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art.
Claims20
A method comprising:
- forming a super steep retrograde channel region at a depth below a surface of a substrate;
- forming a gate oxide layer on the surface of the substrate, wherein the depth is a product of a number and a thickness of the gate oxide layer;
- and
- forming a structure on the surface of the substrate and adjacent to the gate oxide layer.
A method comprising:
- forming a super steep retrograde channel region at a depth below a surface of a substrate;
- forming a gate oxide layer on the surface of the substrate, wherein the depth is a product of a number and a thickness of the gate oxide layer;
- and
- forming a source structure on the surface of the substrate and adjacent to the gate oxide layer.
A method comprising:
- forming a super steep retrograde channel region at a depth below a surface of a substrate;
- forming a gate oxide layer on the surface of the substrate, wherein the depth is a product of a number and a thickness of the gate oxide layer;
- and
- forming a plurality of raised structures on the surface of the substrate and adjacent to the gate oxide layer.
Dependencies are inferred from the claim text.