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US 8,298,891 B1Granted
Resistive-switching memory element
AssigneeIntermolecular, Inc.
InventorsTony Chiang, Prashant Phatak, Chi-I Lang
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Abstract
A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.
Claims7
A method for forming a nonvolatile memory element comprising:
- depositing a first electrode on a substrate;
- forming a porous layer on the first electrode;
- flowing a vapor-based deposition precursor into the porous layer to form point defects in the porous layer;
- and
- depositing a second electrode over the porous layer.
2 more elements
Dependencies are inferred from the claim text.