Electronic device including doped regions between channel and drain regions and a process of forming the same
AssigneeSemiconductor Components Industries, LLC
InventorsGary H. Loechelt, Gordon M. Grivna
Life of this patent
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Abstract
An electronic device can include a drain region of a transistor, wherein the drain region has a first conductivity type. The electronic device can also include a channel region of the transistor, wherein the channel region has a second conductivity type opposite the first conductivity type. The electronic device can further include a first doped region having the first conductivity type, wherein the first doped region extends from the drain region towards the channel region. The electronic device can still further include a second doped region having the first conductivity type, wherein the second doped region is disposed between the first doped region and the channel region.
Claims24
An electronic device comprising:
- a drain region of a transistor, wherein the drain region has a first conductivity type;
- a channel region of the transistor, wherein the channel region has a second conductivity type opposite the first conductivity type;
- a first doped region having the first conductivity type, wherein the first doped region extends from the drain region towards the channel region;
- and
- a second doped region having the first conductivity type, wherein the second doped region is disposed between the first doped region and the channel region,
- wherein the first doped region has a peak dopant concentration lower than peak dopant concentrations of the drain region and the second doped region.
A process of forming an electronic device comprising:
- forming a drain region of a transistor, wherein the drain region is formed along a primary surface of a semiconductor layer and has a first conductivity type;
- forming a first doped region along the primary surface and having the first conductivity type;
- forming a second doped region along the primary surface and having the first conductivity type;
- and
- forming a gate electrode of the transistor after forming the second doped region, wherein a channel region of the transistor is disposed under the gate electrode and along the primary surface and has a second conductivity type opposite the first conductivity type,
- wherein after forming the drain region, first doped region, second doped region, and the gate electrode:
- the first doped region is disposed between the drain region and the second doped region;
- and
- the second doped region is disposed between the first doped region and the channel region.
Dependencies are inferred from the claim text.