Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure
AssigneeGlobalfoundries Inc.
InventorsAndy Wei, Andrew Waite
Life of this patent
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Abstract
In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive structures may have to be provided on the basis of a gate electrode metal, while, nevertheless, a low parasitic capacitance may be accomplished due to providing the resistive structures above the isolation structure.
Claims16
A method of forming a resistive structure of a semiconductor device, the method comprising:
- forming a layer stack above a transistor region and a resistor region of said semiconductor device, said layer stack comprising a high-k dielectric material, a metal-containing cap material and a semiconductor material, said resistor region comprising an isolation structure;
- adjusting a dopant level in said semiconductor material so as to obtain a target resistivity for said resistive structure;
- forming a replacement gate electrode structure in said transistor region and forming said resistive structure in said resistor region above said isolation structure on the basis of said layer stack;
- and
- replacing said semiconductor material selectively in said replacement gate electrode structure while substantially preserving said semiconductor material in said resistive structure.
A method, comprising:
- forming a replacement gate electrode structure above an active semiconductor region and a resistive structure above an isolation structure, said replacement gate electrode structure and said resistive structure comprising a layer stack comprising a high-k dielectric material, a metal-containing cap material and a semiconductor material having a specified dopant level to achieve a target resistance value for said resistive structure;
- forming a mask so as to cover said resistive structure and expose said replacement gate electrode structure;
- removing said semiconductor material selectively from said replacement gate electrode structure;
- forming a metal-containing electrode material above said replacement gate electrode structure and said resistive structure;
- and
- removing excess material of said metal-containing electrode material so as to provide a metal gate electrode structure.
Dependencies are inferred from the claim text.