Method of forming photoresist burr edge and method of manufacturing array substrate

A method of forming a photoresist burr edge comprising:

• applying a photoresist layer on a substrate;
• forming a first thickness region, a second thickness region, and a third thickness region of the photoresist layer by exposing the photoresist layer with a gray tone mask or a half-tone mask and then developing the exposed photoresist layer, wherein the first thickness region, the second thickness region, and the third thickness region are integrally connected, and the first thickness region is between the second thickness region and the third thickness region, wherein the first thickness region has a photoresist ridge upwardly projected on the photoresist layer and corresponds to the region where a photoresist burr edge is to be formed, the second thickness region of the photoresist layer corresponds to the region where no structural pattern is to be formed, and the third thickness region corresponds to the region where a structural pattern is to be formed;
• and
• immediately following the developing of the exposed photoresist layer to obtain the first thickness region, the second thickness region, and the third thickness region, performing an ashing process on the developed photoresist layer for forming the photoresist burr edge of peak shape in the first thickness region, remaining the photoresist in the second thickness region and completely removing the photoresist in the third thickness region.