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AssigneeRenesas Electronics Corporation
InventorsNobuya Koike, Tsukasa Matsushita, Hiroshi Sato, Keiichi Okawa, Atsushi Nishikizawa
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There is a need for providing a technology capable of decreasing on-resistance of a power transistor in a semiconductor device that integrates the power transistor and a control integrated circuit into a single semiconductor chip. There is another need for providing a technology capable of reducing a chip size of a semiconductor device. A semiconductor chip includes a power transistor formation region to form a power transistor, a logic circuit formation region to form a logic circuit, and an analog circuit formation region to form an analog circuit. A pad is formed in the power transistor formation region. The pad and a lead are connected through a clip whose cross section is larger than that of a wire. On the other hand, a bonding pad is connected through the wire.
A method of manufacturing a semiconductor device comprising:
Dependencies are inferred from the claim text.