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US 8,298,857 B2Granted
Negative feedback avalanche diode
AssigneePrinceton Lightwave, Inc.
InventorMark Allen Itzler
Life of this patent
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Abstract
A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically integrated such that little or no additional capacitance is associated with the addition of the resistor.
Claims16
A method for forming a negative feedback avalanche photodetector comprising:
- forming a first avalanche photodiode comprising a first doped region having a first perimeter, wherein the first avalanche photodiode is dimensioned and arranged to produce an electrical signal in response to absorption of a photon having a wavelength greater than 1000 nm;
- and
- forming a first thin-film resistor having a first terminal and a second terminal, wherein the first thin-film resistor and the first avalanche photodiode are monolithically integrated, and wherein the first thin-film resistor is disposed above the first doped region such that it is located completely within the first perimeter, and wherein the first terminal and the first doped region are electrically connected, and further wherein the first thin-film resistor is formed by operations comprising;
- forming a first layer on the first avalanche photodiode, wherein the first layer comprises a dielectric material;
- forming a first opening in the first layer, wherein the first opening is located within the first perimeter;
- forming a second layer on the first layer, wherein the second layer comprises an electrically conductive material, and wherein the second layer and the first doped region are electrically connected;
- and
- patterning the second layer to form the first thin-film resistor.
5 more elements
A method for forming a negative feedback avalanche photodetector comprising:
- forming a first avalanche photodiode comprising a first doped region having a first perimeter, wherein the first avalanche photodiode is dimensioned and arranged to produce an electrical signal in response to absorption of a photon having a wavelength greater than 1000 nm;
- and
- forming a first thin-film resistor having a first terminal and a second terminal, wherein the first thin-film resistor and the first avalanche photodiode are monolithically integrated, and wherein the first terminal and the first doped region are electrically-connected;
- wherein the effect of the integration of the first thin-film resistor with the first avalanche photodiode on the RC time constant of the negative avalanche photodetector is less than approximately 5%.
1 more element
A method for forming a negative feedback avalanche photodetector that is operable at wavelengths greater than 1000 nm, the method comprising:
- forming a first active region in a substrate, the first active region having a first perimeter;
- forming a first insulator region disposed on the first active region;
- and
- forming a first thin-film resistor having a first terminal, a second terminal, and a first conductive path that is electrically connected with each of the first terminal and the second terminal, the first terminal and second terminal being co-located on a first surface of the first insulator region, wherein the first conductive path is characterized by a resistance within the range of approximately 10 kΩ to approximately 10 MΩ, and wherein the first terminal and the first active region are electrically connected, and further wherein the resistance of the first thin-film resistor is substantially equal to the resistance of the first conductive path;
- wherein the first thin-film resistor is disposed above the first active region such that the first conductive path is located completely within the first perimeter.
2 more elements
Dependencies are inferred from the claim text.