Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
AssigneeUriel Solar, Inc.
InventorJames David Garnett
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Abstract
A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
Claims18
A method for forming a photovoltaic device, comprising:
- forming a first layer over a superstrate or substrate, the first layer comprising tellurium (Te) and cadmium (Cd) or zinc (Zn);
- forming a second layer over the first layer, the second layer comprising Cd and Te;
- and
- forming a third layer over the second layer, the third layer comprising Cd, Zn and Te,
- wherein:
- (i) the first layer is chemically doped p-type, the second layer is chemically doped p-type, and the third layer is chemically doped n-type.
A method for forming a photovoltaic device, comprising:
- forming a low ohmic ZnTe contact layer over a superstrate or substrate, the low ohmic ZnTe contact layer doped with a p-type dopant;
- forming a p-type layer comprising cadmium (Cd) and tellurium (Te) over the lower ohmic ZnTe layer;
- forming an n-type CdZnTe layer over the p-type layer to form a p-n heterojunction or homojunction;
- and
- forming a low ohmic contact layer comprising Cd and Te over the n-type CdZnTe layer.
A method for forming a photovoltaic device, comprising:
- forming a low ohmic p-type ZnTe contact layer over a superstrate or substrate;
- forming an intrinsic CdTe (i-CdTe) layer over the low ohmic p-type ZnTe layer;
- and
- forming a low ohmic n-type CdTe contact layer over the i-CdTe layer.
A method for forming a high performance single junction photovoltaic device, comprising:
- forming a low ohmic CdTe contact layer over a superstrate or substrate;
- forming an n-type layer comprising cadmium (Cd) and tellurium (Te) over the low ohmic CdTe layer;
- forming a p-type CdZnTe layer over the n-type layer to form an n-p heterojunction or homojunction;
- and
- forming a low ohmic p-type CdZnTe contact layer over the p-type CdZnTe layer.
A method for forming a photovoltaic device, comprising
- forming an n-type layer having Cd and Te;
- forming an intrinsic CdTe layer over the n-type layer;
- and
- forming a p-type layer having Te and one or more of Cd and Zn over the intrinsic CdTe layer.
A method for forming a photovoltaic device, comprising:
- forming a first layer over a non-crystalline superstrate or substrate, the first layer comprising tellurium (Te) and cadmium (Cd) or zinc (Zn);
- forming a second layer over the first layer, the second layer comprising Cd and Te;
- and
- forming a third layer over the second layer, the third layer comprising Cd, Zn and Te, wherein:
- (i) the first layer is chemically doped n-type, the second layer is chemically doped n-type, and the third layer is chemically doped p-type;
- or
- (ii) the first layer is chemically doped p-type, the second layer is chemically doped p-type, and the third layer is chemically doped n-type.
Dependencies are inferred from the claim text.