Method of manufacturing a solid-state imaging device with a silicide blocking layer and electronic apparatus

A method of manufacturing a solid-state imaging device, comprising the steps of:

• forming a silicide blocking layer in a pixel section with a plurality of pixels, each pixel having a photoelectric conversion element and a pixel transistor, the silicide blocking layer covering each pixel, isolation portions disposed between adjacent pixels;
• selectively removing the silicide blocking layer from a part or an entire area above the isolation portions in the pixel section while the silicide blocking layer remains on the photoelectric conversion element;
• forming a metal film in the pixel section and a peripheral circuit section with the silicide blocking layer covering the photoelectric conversion element;
• forming a metal silicide layer in the peripheral circuit section by siliciding a portion of the metal film;
• and
• removing a residual of the metal film not silicided,
• wherein,
• the silicide blocking layer is configured to protect the photoelectric conversion element when the metal silicide layer is formed.