Nitrogen reactive sputtering of Cu-In-Ga-N for solar cells
AssigneeIntermolecular, Inc.
InventorsGuowen Ding, Hien Minh Huu Le, Guizhen Zhang
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Abstract
Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
Claims6
A method for forming a thin film photovoltaic device comprising:
- forming a back contact material above a substrate;
- depositing Cu, In and Ga by PVD in a nitrogen containing atmosphere to form a Cu—In—Ga—N absorber layer above the back contact layer;
- forming a buffer layer above the absorber layer;
- and
- forming a TCO stack above the buffer layer.
Dependencies are inferred from the claim text.