MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same

A MEMS device, comprising:

• a substrate;
• an electrode layer located over the substrate;
• a movable layer located over the electrode layer, wherein the movable layer is generally spaced apart from the electrode layer by an air gap, said movable layer comprising an aperture extending through the movable layer;
• and
• a support structure located at least partially beneath the aperture in the movable layer, said support structure comprising a convex sidewall portion located underneath the movable layer.

A MEMS device, comprising:

• first means for electrically conducting;
• second means for electrically conducting;
• and
• means for supporting said second conducting means over said first conducting means, wherein said second conducting means is movable relative to said first conducting means in response to generating electrostatic potential between said first and second conducting means, and wherein said supporting means extend through an aperture in said second conducting means and enclose at least a portion of said second conducting means.