US 8,298,842 B2 · Method for manufacturing semiconductor light-emitting device

Abstract

Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.

Claims10

Dependent claims

A method for manufacturing a semiconductor light-emitting device comprising:

coating a substrate with photoresist;
forming a mask pattern on the substrate by selectively removing the photoresist;
forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas;
wet-etching the dry-etched substrate through the use of etching solution with the mask pattern remaining, the mask pattern being removed by the wet-etching;
forming a first semiconductor layer on the substrate including the protrusions;
forming an active layer on the first semiconductor layer;
forming a second semiconductor layer on the active layer;
etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed;
and
forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer,
wherein the process of wet-etching the substrate is carried out by using an etching solution which is obtained by mixing sulfuric acid and hydrogen peroxide in a ratio of 1:1 or 1:2.

8 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor light-emitting device

Life of this patent

Method for manufacturing semiconductor light-emitting device

Life of this patent

Abstract

Claims10