Dual sided processing and devices based on freestanding nitride and zinc oxide films

The method of forming a semiconductor device comprising the steps of:

• growing a freestanding semiconductor alloy film on a substrate;
• said semiconductor alloy being a nitride alloy or a zinc oxide alloy;
• depositing a first semiconductor layer on the upper surface of a freestanding semiconductor alloy film;
• said first semiconductor layer being an oxide, a nitride, silicon, an antimonide, a metal, a dielectric or other semiconductor material;
• said depositing being by a deposition process of MOCVD, HVPE, MBE, CVD, sputter, evaporative, or spincoating;
• removing said freestanding semiconductor alloy film and said first semiconductor layer from said substrate prior to depositing a second semiconductor layer on the lower surface of a freestanding semiconductor alloy film;
• depositing a second semiconductor layer on the lower surface of a freestanding semiconductor alloy film;
• said second semiconductor layer being an oxide, a nitride, silicon, an antimonide, a metal, a dielectric or other semiconductor material;
• said semiconductor alloy being a nitride alloy or a zinc oxide alloy;
• said depositing being by a deposition process of MOCVD, HVPE, MBE, CVD, sputter, evaporative, or spincoating.