Manufacturing method of a thin film active element
AssigneeSumitomo Chemical Company, Limited
InventorKenji Kasahara
Life of this patent
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Abstract
There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed on a plane surface to which the light-shielding source/drain electrode belongs, and disposed to have a gap interposed between the light-shielding source/drain electrode and the light-permeable source/drain electrode, a channel layer formed in the gap between the light-shielding source/drain electrode and the light-permeable source/drain electrode, and a gate electrode applying an electric field to the channel layer formed in the gap.
Claims5
A method of producing a thin film active element, comprising the steps of:
- forming a light-shielding conductive layer on a light-permeable substrate;
- forming a light-permeable conductive layer in a region adjacent to the light-shielding conductive layer so as to overlap at least a side of a part in the light-shielding conductive layer;
- forming a photoresist film covering the light-permeable conductive layer;
- exposing the photoresist film using the light-shielding conductive layer as a light-shielding mask from a direction of the substrate;
- forming a mask pattern by developing the photoresist film such that the region of the exposed photoresist film remains;
- performing etching until the light-shielding conductive layer and the light-permeable conductive layer are spaced apart from each other by overetching the light-permeable conductive layer using the mask pattern as a mask until an etching species comes under the mask;
- and
- forming a channel layer functioning as a carrier region of the active element in a gap between the light-permeable conductive layer and light-shielding conductive layer which are spaced apart from each other.
Dependencies are inferred from the claim text.