Low temperature deposition of silicon-containing films

A process to deposit silicon nitride on a substrate in a processing chamber, comprising:

• a. contacting the substrate with a nitrogen-containing source to absorb at least a portion of the nitrogen-containing source on the substrate, wherein the contacting is a plasma-enhanced process;
• b. purging unabsorbed nitrogen-containing source;
• c. contacting the substrate with a silicon-containing precursor to react with the portion of the absorbed nitrogen-containing source;
• and
• d. purging unreacted silicon-containing precursor;
• wherein the silicon-containing precursor is monochlorosilane and,
• steps a through d are repeated at least once.