Methods for selective pre-coating of a plasma processing chamber
AssigneeLam Research Corporation
InventorAndreas Fischer
Life of this patent
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Abstract
A method for processing a substrate in a plasma processing system is provided. The method includes disposing a first confinement ring set in a first position. The method also includes depositing a first coating on a first portion of the plasma processing system using a first plasma in a first area defined by the first confinement ring set in the first position. The method further includes depositing a second coating on a second portion of the plasma processing system using a second plasma in a second area between the first confinement ring set in the first position and a second confinement ring set. The method yet also includes processing the substrate using a third plasma with the first confinement ring set disposed in a second position.
Claims18
A method for processing a substrate in a plasma processing system, the method comprising:
- disposing a first confinement ring set in a first position such that it circumscribes a first area;
- depositing a first coating on a first portion of the plasma processing system using a first plasma in the first area defined by the first confinement ring set in the first position;
- disposing a second confinement ring set in a position such that the first confinement ring set is interposed between the first area and the second confinement ring set when said first confinement ring set is in the first position and disposing the second confinement ring such that it circumscribes the first confinement ring set in the first position;
- depositing a second coating on a second portion of the plasma processing system using a second plasma in a second area between the first confinement ring set in the first position and the second confinement ring set;
- processing the substrate using a third plasma with the first confinement ring set disposed in a second position;
- and
- wherein, the first coating is formed using the first plasma formed using an ignited silicon-containing material ignited in the first area;
- and
- wherein, the second coating is formed using the second plasma formed using an ignited hydrocarbon-containing material ignited in the second area.
A method for processing a substrate in a plasma processing system, the method comprising:
- disposing a first confinement ring set in a first position;
- depositing a first coating on a first portion of the plasma processing system using a first plasma in a first area defined by the first confinement ring set in the first position;
- disposing a second confinement ring set in a position such that the first confinement ring set is interposed between the first area and the second confinement ring set when said first confinement ring set is in the first position;
- depositing a second coating on a second portion of the plasma processing system using a second plasma in a second area between the first confinement ring set in the first position and the second confinement ring set;
- and
- processing the substrate using a third plasma with the first confinement ring set disposed in a second position;
- wherein at least one of the first coating and the second coating includes at least one of a silicon layer, a hydrocarbon layer, a silicon dioxide layer, an amorphous silicon layer, a silicon nitride layer, and a silicon carbide layer;
- and
- wherein at least one of the first coating and the second coating comprises coating quartz surfaces within the system with a hydrocarbon layer.
Dependencies are inferred from the claim text.