Isostatic pressing method for applying a silicon powder onto a silicon brick for silicon crystal growth in a mono-crystal or multi-crystal furnace
AssigneeJiangxi Sai Wei LDK Solar Hi-Tech Co., Ltd.
InventorsTao Zhang, Yuepeng Wan, Dejing Zhong
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Abstract
An isostatic pressing method for applying silicon powder as an original raw material for silicon crystal growth includes pressing silicon powder having a particle size of 0.1 to 1,000 micrometers into a silicon brick employing cold or hot isostatic pressing to provide a pressed silicon brick; and charging the pressed silicon brick into a furnace for silicon crystal growth. The furnace for silicon crystal growth may be a mono-crystal furnace for growing monocrystalline silicon or a multi-crystal furnace for growing polycrystalline silicon.
Claims8
An isostatic pressing method for applying silicon powder as an original raw material for silicon crystal growth, comprising:
- pressing silicon powder having a particle size of 0.1 to 1,000 micrometers into a silicon brick employing cold or hot isostatic pressing to provide a pressed silicon brick;
- and
- charging the pressed silicon brick into a furnace for silicon crystal growth.
An isostatic pressing method for applying silicon powder as an original raw material for silicon crystal growth in a mono-crystal furnace or a multi-crystal furnace, comprising:
- pressing silicon powder having a particle size of 0.1 to 1,000 micrometers into a silicon brick employing cold or hot isostatic pressing to provide a pressed silicon brick;
- and
- charging the pressed silicon brick into the mono-crystal furnace or the multi-crystal furnace for silicon crystal growth for use in the solar cell or semiconductor industry.
Dependencies are inferred from the claim text.