Back to results
US 8,298,467 B2Granted
Method of low temperature imprinting process with high pattern transfer yield
AssigneeAgency for Science, Technology and Research
InventorsYongan Xu, Hong Yee Low
Life of this patent
Estimating the term…
Abstract
The present invention is directed to novel methods of imprinting substrate-supported or freestanding structures at low cost, with high pattern transfer yield, and using low processing temperature. Such methods overcome many of the above-described limitations of the prior art. Generally, such methods of the present invention employ a sacrificial layer of film.
Claims20
A method for fabricating a multi-layer structure, the method comprising:
- coating a polymer onto a silane-treated mold;
- pressing a first sacrificial substrate onto said polymer at a temperature above a glass transition temperature for said polymer;
- separating said polymer from said mold at a temperature below said glass transition temperature for said polymer after said first sacrificial substrate was pressed onto said polymer;
- removing a residual layer on said polymer by plasma etching said polymer thereby forming a first structure;
- forming a second polymer structure having a residual layer, wherein a second sacrificial layer is attached to said second polymer structure;
- pressing said first and said second structures together prior to plasma etching said second polymer structure;
- and
- removing said first sacrificial substrate from said first structure without destroying said second sacrificial layer from said second structure to yield a third structure comprising a three-layer structure.
5 more elements
A method for fabricating a multi-layer structure, the method comprising:
- treating a patterned silicon mold with silane;
- spin-coating a polymer solution onto said patterned silicon mold in such a manner that said polymer solution fills up trenches of said mold thereby forming a planarized thin film;
- pressing a substrate into said planarized thin film above a glass transition temperature of said polymer solution;
- separating said substrate from said planarized thin film below said glass transition temperature of said polymer solution after a period of time following said pressing of said substrate into said planarized thin film;
- pressing a sacrificial film onto a recoated polymer-coated silicon mold at a temperature above said glass transition temperature of said polymer;
- separating said sacrificial film from said polymer-coated silicon mold at a temperature below said glass transition temperature of said polymer resulting in a pattern transfer from said mold to said sacrificial film;
- removing a residual layer on said polymer by plasma etching said polymer thereby forming a first structure;
- pressing said first structure onto a pre-patterned polymer on a second substrate;
- and
- removing said sacrificial film from said first structure thereby forming a third structure, wherein said third structure is a multi-layer structure.
7 more elements
A method for fabricating a multi-layer structure, the method comprising:
- treating a patterned silicon mold with silane;
- spin-coating a polymer solution onto said patterned silicon mold in such a manner that said polymer solution fills up trenches of said mold thereby forming a planarized thin film;
- pressing a substrate into said planarized thin film above a glass transition temperature of said polymer solution;
- separating said substrate from said planarized thin film below said glass transition temperature of said polymer solution after a period of time following said pressing of said substrate into said planarized thin film;
- pressing a sacrificial film onto a recoated polymer-coated silicon mold at a temperature above said glass transition temperature of said polymer;
- separating said sacrificial film from said polymer-coated silicon mold at a temperature below said glass transition temperature of said polymer resulting in a pattern transfer from said mold to said sacrificial film;
- removing a residual layer on said polymer by plasma etching said polymer thereby forming a first structure;
- pressing said first structure onto a patterned sacrificial film;
- and
- removing sacrificial films from said first structure and said patterned sacrificial film thereby forming a third structure, wherein said third structure is a multi-layer structure.
7 more elements
Dependencies are inferred from the claim text.